,CAPLOATDEVTECHNDEVTECHPDIOE1 FWR GANGLIONGND HRES HWR IDIF INDFLOAISCOPE ISWTCH1ISWTCH2MMETER MOSCAP NFET4 NFET5 NFET7F NFET7T NPN NPN NSPC1 NUMBERS OPAMP PFET4 PFET5 PFET6 PFET7F PFET7T PHYSICALPNP PNP PSPC1 PWL RESLOATRTD RUNSPEC STARS THERMAL VDD VDIF VSWTCH WRAMP @ 5  6 h 6 E8   O        4K    r M q  =  Zk  c  L     h  j    $    ~ k   c  x {   4   2   1 :h j 0   =  $ A  | m   ! kt    2  @  m n        Floating CapacitorUF:CapacitanceUV:Present Voltage on Top PinUV:Reset Voltage on Top PinUF:Top Pin CapacitanceUV:Present Voltage on Bottom PinUV:Reset Voltage on Bottom PinUF:Bottom Pin CapacitanceCAPFLOAT_LOG_CAPFLOAT_INITLIB_32Cv vv v vv v v v v  vvvvvvvvvDevice Technology (N-Channel)C:Process ID3Um,0:Lambda (identical for n-channel and p-channel)3Um,0:Ldrawn - Leff3Um,0:Wdrawn - Weff3Um,0:Gate Oxide Thickness (Tox)3U,0:Gate Capacitance (computed, Cox) [F/m^2]3U,0:Carrier Mobility at T=300K [cm^2/(V*s)]3U,0:Carrier Mobility (computed, mu(T))3U,0:Bulk Doping Concentration (Na) [1/cm^3]3U,0:Na Gate-Length Correction Term (NaL)3UV,0:Potential at Depletion Edge (Psi)3U,0:Early Effect Slope3Um,0:Early Effect Channel Length Offset (L_0)3U,0:Active-to-Well Capacitance (F/um^2)3U,0:Active-to-Gate Overlap Capacitance (F/um)3U,0:Equivalent Linear Gate Capacitance (F/um^2)3U,0:Well-to-Bulk Capacitance (F/um^2)DEVTECHN_LOG_DEVTECHN_INITLIB_32Cv vv v vv v v v v  vvvvvvvvvvvDevice Technology (P-Channel)C:Process ID3Um,0:Lambda (identical for n-channel and p-channel)3Um,0:Ldrawn - Leff3Um,0:Wdrawn - Weff3Um,0:Gate Oxide Thickness (Tox)3U,0:Gate Capacitance (computed, Cox) [F/m^2] 3U,0:Carrier Mobility at T=300K [cm^2/(V*s)]3U,0:Carrier Mobility (computed, mu(T))3U,0:Bulk Doping Concentration (Na) [1/cm^3]3U,0:Na Gate-Length Correction Term (NaL)3UV,0:Potential at Depletion Edge (Psi)3U,0:Early Effect Slope3Um,0:Early Effect Channel Length Offset (L_0)3U,0:Active-to-Well Capacitance (F/um^2)3U,0:Active-to-Gate Overlap Capacitance (F/um)3U,0:Equivalent Linear Gate Capacitance (F/um^2)3U,0:Well-to-Bulk Capacitance (F/um^2)DEVTECHP_LOG_DEVTECHP_INITLIB_32  DiodeUA: IsUV: kT/qnUV: Crowbar VoltageUV: Present Voltage on Left PinUV: Reset Voltage on Left PinUF: Left Pin CapacitanceUV: Present Voltage on Right PinUV: Reset Voltage on Right PinUF: Right Pin CapacitanceDIODE1_LOG_DIODE1_INITLIB_32       Full Wave Rectifier Circuit (Absolute Value)UV:Rectifier offset voltage:U:Fraction of positive current at output:U:Fraction of negative current at output:UV:Kt/qn for differential inputs:UA:Diode leakage current:UV:Vt:UV:Early voltage:UV:Kt/qn for non-input transistors:UF:Vset - other pins capacitance:UF:Vout - Vplus,Vminus capacitance:UF:Vplus - Vminus capacitance:UV:Vminus present voltage:UV:Vminus voltage on reset:UF:Vminus node capacitance:UV:Vplus present voltage:UV:Vplus voltage on reset:UF:Vplus node capacitance:UV:Vset present voltage:UV:Vset voltage on reset:UF:Vset node capacitance:UV:Vout present voltage:UV:Vout voltage on reset:UF:Vout node capacitance:TC_LOG_FWR_INITLIB_32      GanglionUF:Capacitance between Vin and ground:UF:Capacitance between Vin and Vout:UV:Inverter switching threshold:Uohm:Output resistance:UF:Capacitance between Vset and other nodes:Uv-1:Steepness of inverter slope:For leak transistorUA:Diode leakage current:UV:Vt:UV:Kt/qn:UV:Early voltage:UV:Vin present voltage:UV:Vin voltage on reset:UF:Vin node capacitance:UV:Vout present voltage:UV:Vout voltage on reset:UF:Vout node capacitance:UV:Vleak present voltage:UV:Vleak voltage on reset:UF:Vleak node capacitance:GANGLION_LOG_GANGLION_INITLIB_32 Gnd      Horizontal ResistorUV:Resistance offset voltage:U:Fraction of positive current at output:U:Fraction of negative current at output:UV:Kt/qn for differential inputs:UA:Diode leakage current:UV:Vt:UV:Early voltage:UV:Kt/qn for non-input transistors:UF:Vlow - other pins capacitance:UF:Vhigh - other pins capacitance:UF:Vin - Vout capacitance:UV:Vin present voltage:UV:Vin voltage on reset:UF:Vin node capacitance:UV:Vout present voltage:UV:Vout voltage on reset:UF:Vout node capacitance:UV:Vlow present voltage:UV:Vlow voltage on reset:UF:Vlow node capacitance:UV:Vhigh present voltage:UV:Vhigh voltage on reset:UF:Vhigh node capacitance:HRES_LOG_HRES_INITLIB_32      Half Wave Rectification CircuitUV:Rectifier offset voltage:U:Fraction of positive current at output:U:UV:Kt/qn for differential inputs:UA:Diode leakage current:UV:Vt:UV:Early voltage:UV:Kt/qn for non-input transistors:UF:Vset - other pins capacitance:UF:Vout - Vplus,Vminus capacitance:UF:Vplus - Vminus capacitance:UV:Vminus present voltage:UV:Vminus voltage on reset:UF:Vminus node capacitance:UV:Vplus present voltage:UV:Vplus voltage on reset:UF:Vplus node capacitance:UV:Vset present voltage:UV:Vset voltage on reset:UF:Vset node capacitance:UV:Vout present voltage:UV:Vout voltage on reset:UF:Vout node capacitance:TC_LOG_HWR_INITLIB_32                B:Freeze Time?UV:Crowbar Voltage:VDC,Pulse,Sine:Shape of waveform:DC;UA:DC Current:Pulse;UA:Initial Current:Pulse;UA:Pulsed Current:Pulse;Us:Delay Time:Pulse;Us:Rise Time:Pulse;Us:Fall Time:Pulse;Us:Pulse Width:Pulse;Us:Period:Pulse;Us:Reset delay:Sine;UA:Offset Current:Sine;UA:Amplitude:Sine;UHz:Frequency:Sine;Deg:Phase:Sine;Us:Delay:UV:Present Voltage on Pin Capacitor +UV:Reset Voltage on Pin Capacitor +UF:Pin Capacitance +UV:Present Voltage on Pin Capacitor -UV:Reset Voltage on Pin Capacitor -UF:Pin Capacitance -IDIFF_LOG_IDIFF_INITLIB_32          Floating Inductor -- Does NOT Simulate, for Logspc onlyUH:Inductance:UA:Memory Current:UA:Memory Current on Reset:UV:Present Voltage on Top Pin:UV:Reset Voltage on Top Pin:UF:Top Pin Capacitance:UV:Present Voltage on Bottom Pin:UV:Reset Voltage on Bottom Pin:UF:Bottom Pin Capacitance:     !Current Scope Interface GateU:Present ValueC:Display FormatI3:Decimal DigitsISCOPE_LOG_ISCOPE_INITLIB_32   Current Out SwitchUV:Crowbar Voltage:VBistable,Monostable:Switch waveform:Bistable;UA:Initial Current Out:Bistable;UA:Pulsed Current Out:Bistable;Us:Rise Time:Bistable;Us:Fall Time:Bistable;VOff,On:Reset State:Monostable;UA:Initial Current Out:Monostable;UA:Pulsed Current Out:Monostable;Us:Rise Time:Monostable;Us:Fall Time:Monostable;Us:Pulse Width:UV:Present Voltage on Pin CapacitorUV:Reset Voltage on Pin CapacitorUF:Pin CapacitanceISWITCH1_LOG_ISWITCH1_INITLIB_32   Current In SwitchUV:Crowbar Voltage:VBistable,Monostable:Switch waveform:Bistable;UA:Initial Current In:Bistable;UA:Pulsed Current In:Bistable;Us:Rise Time:Bistable;Us:Fall Time:Bistable;VOff,On:Reset State:Monostable;UA:Initial Current In:Monostable;UA:Pulsed Current In:Monostable;Us:Rise Time:Monostable;Us:Fall Time:Monostable;Us:Pulse Width:UV:Present Voltage on Pin CapacitorUV:Reset Voltage on Pin CapacitorUF:Pin CapacitanceISWITCH2_LOG_ISWITCH2_INITLIB_32   MultiMeterU:Present ValueC:Display FormatI3:Decimal DigitsVVoltage,Current:Meter FunctionMMETER_LOG_MMETER_INITLIB_32               MOS CapacitorVLinear,Nonlinear:Device ModelLinear;UF:Total CapacitanceNonlinear;UF:Total CapacitanceNonlinear;UV:VtnNonlinear;UV:VtpNonlinear;UV:Kt/qnUV:Present Voltage On PinUV:Reset Voltage On PinUF:Parasitic Capacitance Of PinMOSCAP_LOG_MOSCAP_INITLIB_32   Nfet TransistorUV:Gate Present VoltageUV:Gate Voltage On ResetUF:Gate To Substrate CapacitanceUV:Drain Present VoltageUV:Drain Voltage On ResetUF:Drain To Substrate CapacitanceUV:Source Present VoltageUV:Source Voltage On ResetUF:Source To Substrate CapacitanceUF:Gate to Drain CapacitanceUF:Gate to Source CapacitanceU:W/LUV:VtUA:Diode Leakage CurrentU:Saturation Fit FactorUV:kT/qnUV:Early Effect V0NFET4_LOG_NFET4_INITLIB_32   Nfet TransistorUV:Gate Present VoltageUV:Gate Voltage On ResetUF:Gate To Substrate CapacitanceUV:Drain Present VoltageUV:Drain Voltage On ResetUF:Drain To Substrate CapacitanceUV:Source Present VoltageUV:Source Voltage On ResetUF:Source To Substrate CapacitanceUF:Gate to Drain CapacitanceUF:Gate to Source CapacitanceU:W/LUV:VtUS/V:BetaU:KappaUV:kT/qUV:Early Effect V0NFET5_LOG_NFET5_INITLIB_32     Nfet Transistor (NFET7F)3UV:Gate Present Voltage3UV:Gate Voltage On Reset3UF:Gate To Well Capacitance (computed)3UV:Drain Present Voltage3UV:Drain Voltage On Reset3UF:Drain To Well Capacitance (computed)3UV:Source Present Voltage3UV:Source Voltage On Reset3UF:Source To Well Capacitance (computed)3UV:Well Present Voltage3UV:Well Voltage On Reset3UF:Well To Substrate Capacitance (computed)3U:W (drawn, in lambda)3U:L (drawn, in lambda)3Um^2:Source Area3Um^2:Drain Area3Um^2:Well Area3U:Na Offset (multiplicitive)3U:Mu Offset (multiplicitive)3UC:Qss Offset (additive)3UV:Vt (computed)3U:Kappa (computed)NFET7F_LOG_NFET7F_INITLIB_32   Nfet Transistor (NFET7T)3UV:Gate Present Voltage3UV:Gate Voltage On Reset3UF:Gate To Substrate Capacitance (computed)3UV:Drain Present Voltage3UV:Drain Voltage On Reset3UF:Drain To Substrate Capacitance (computed)3UV:Source Present Voltage3UV:Source Voltage On Reset3UF:Source To Substrate Capacitance (computed)3U:W (drawn, in lambda)3U:L (drawn, in lambda)3Um^2:Source Area3Um^2:Drain Area3U:Na Offset (multiplicitive)3U:Mu Offset (multiplicitive)3UC:Qss Offset (additive)3UV:Vt (computed)3U:Kappa (computed)3UV:Early Voltage (computed)NFET7T_LOG_NFET7T_INITLIB_32    NPN TransistorUV:Base Present VoltageUV:Base Voltage on ResetUF:Base to Substrate CapacitanceUV:Collector Present VoltageUV:Collector Voltage on ResetUF:Collector to Substrate CapacitanceUV:Emitter Present VoltageUV:Emitter Voltage on ResetUF:Emitter to Substrate CapacitanceUF:Base to Emitter CapacitanceUF:Base to Collector CapacitanceU:Forward gainU:Reverse gainUA:IsUV:Kt/qUV:Crowbar VoltageNPN1_LOG_NPN1_INITLIB_32    NPN2 TransistorUV:Base Present VoltageUV:Base Voltage on ResetUF:Base to Substrate CapacitanceUV:Collector Present VoltageUV:Collector Voltage on ResetUF:Collector to Substrate CapacitanceUV:Emitter Present VoltageUV:Emitter Voltage on ResetUF:Emitter to Substrate CapacitanceUF:Base to Emitter CapacitanceUF:Base to Collector CapacitanceU:Forward gainU:Reverse gainUA:IsUV:Kt/qUV:Crowbar VoltageUV:VaNPN2_LOG_NPN2_INITLIB_32     Nfet Transistor (separate L and W, good for logspc)UV:Gate Present VoltageUV:Gate Voltage On ResetUF:Gate To Substrate CapacitanceUV:Drain Present VoltageUV:Drain Voltage On ResetUF:Drain To Substrate CapacitanceUV:Source Present VoltageUV:Source Voltage On ResetUF:Source To Substrate CapacitanceUV:Well Present VoltageUV:Well Voltage On ResetUF:Well CapacitanceUF:Gate to Drain CapacitanceUF:Gate to Source CapacitanceUum:WUum:LUV:VtUS/V:BetaU:KappaUV:kT/qUV:Early Effect V0U:NumberNSPC1_LOG_NSPC1_INITLIB_32Simulation ConstantsUV:Vdd:UV:Maximum voltage change per timestep:UV:Highest voltage permitted:UV:Lowest voltage permitted:Us:Maximum timestep:Us:Minimum timestep to relax accuracy:Us:Minimum timestep to abort simulation:U:Relative error tolerance:U:Epsilon for equation solver:UV:Epsilon for error check:U:Timestep scaling factor:I:Maximum iteration scaling factor:I:Maximum iterations for initial attempt:R:Range of optimal voltage change:UV:Initial guess for zero volt node:UF:Node capacitance:NUMBERS_LOG_NUMBERS_INITLIB_32      Transconductance Amplifier With Limited Output RangeUV:Amplifier offset voltage:U:Fraction of positive current at output:U:Fraction of negative current at output:UV:Kt/qn for differential inputs:UA:Diode leakage current:UV:Vt:UV:Early voltage:UV:Kt/qn for non-input transistors:UF:Vset - other pins capacitance:UF:Vout - Vplus,Vminus capacitance:UF:Vplus - Vminus capacitance:UV:Vminus present voltage:UV:Vminus voltage on reset:UF:Vminus node capacitance:UV:Vplus present voltage:UV:Vplus voltage on reset:UF:Vplus node capacitance:UV:Vset present voltage:UV:Vset voltage on reset:UF:Vset node capacitance:UV:Vout present voltage:UV:Vout voltage on reset:UF:Vout node capacitance:TC_LOG_OPAMP_INITLIB_32    Pfet TransistorUV:Gate Present VoltageUV:Gate Voltage On ResetUF:Gate To Substrate CapacitanceUV:Drain Present VoltageUV:Drain Voltage on ResetUF:Drain To Substrate CapacitanceUV:Source Present VoltageUV:Source Voltage On ResetUF:Source To Substrate CapacitanceUF:Gate to Drain CapacitanceUF:Gate to Source CapacitanceU:W/LUV:VtUA:Diode Leakage CurrentU:Saturation Fit FactorUV:kT/qnUV:Early Effect V0PFET4_LOG_PFET4_INITLIB_32    Pfet TransistorUV:Gate Present VoltageUV:Gate Voltage On ResetUF:Gate To Substrate CapacitanceUV:Drain Present VoltageUV:Drain Voltage On ResetUF:Drain To Substrate CapacitanceUV:Source Present VoltageUV:Source Voltage On ResetUF:Source To Substrate CapacitanceUF:Gate to Drain CapacitanceUF:Gate to Source CapacitanceU:W/LUV:VtUS/V:BetaU:KappaUV:kT/qUV:Early Effect V0PFET5_LOG_PFET5_INITLIB_32     Pfet Transistor (Floating Well)UV:Gate Present VoltageUV:Gate Voltage On ResetUF:Gate To Substrate CapacitanceUV:Drain Present VoltageUV:Drain Voltage On ResetUF:Drain To Substrate CapacitanceUV:Source Present VoltageUV:Source Voltage On ResetUF:Source To Substrate CapacitanceUV:Well Present VoltageUV:Well Voltage On ResetUF:Well To Substrate Capacitance UF:Gate to Drain CapacitanceUF:Gate to Source CapacitanceU:W/LUV:VtUS/V:BetaU:KappaUV:kT/qUV:Early Effect V0PFET6_LOG_PFET6_INITLIB_32v v vvvv v vvC   Pfet Transistor (PFET7F)3UV:Gate Present Voltage3UV:Gate Voltage On Reset3UF:Gate To Well Capacitance (computed)3UV:Drain Present Voltage3UV:Drain Voltage On Reset3UF:Drain To Well Capacitance (computed)3UV:Source Present Voltage3UV:Source Voltage On Reset3UF:Source To Well Capacitance (computed)3UV:Well Present Voltage3UV:Well Voltage On Reset3UF:Well To Substrate Capacitance (computed)3U:W (drawn, in lambda)3U:L (drawn, in lambda)3Um^2:Source Area3Um^2:Drain Area3Um^2:Well Area3U:Na Offset (multiplicitive)3U:Mu Offset (multiplicitive)3UC:Qss Offset (additive)3UV:Vt (computed)3U:Kappa (computed)PFET7F_LOG_PFET7F_INITLIB_32v v vvvv v vC  Pfet Transistor (PFET7T)3UV:Gate Present Voltage3UV:Gate Voltage On Reset3UF:Gate To Substrate Capacitance (computed)3UV:Drain Present Voltage3UV:Drain Voltage On Reset3UF:Drain To Substrate Capacitance (computed)3UV:Source Present Voltage3UV:Source Voltage On Reset3UF:Source To Substrate Capacitance (computed)3U:W (drawn, in lambda)3U:L (drawn, in lambda)3Um^2:Source Area3Um^2:Drain Area3U:Na Offset (multiplicitive)3U:Mu Offset (multiplicitive)3UC:Qss Offset (additive)3UV:Vt (computed)3U:Kappa (computed)3UV:Early Voltage (computed)PFET7T_LOG_PFET7T_INITLIB_32Cv vv v vv v v v v  vvvvvvvvvvPhysical ConstantsAbbreviationsC=Coulomb, F=Farad, m=meter, V=Volts, f=femto, p=picon=nano, u=micro, m=milli, K=Kilo, M=Mega, G=Giga3U,0:Boltzmann's Constant (k) [Joules/degree]3UC,0:Electron Charge (q)3UF/m,0:Permittivity of Vacuum3UF/m,0:Permittivity of Silicon3UF/m,0:Permittivity of Silicon Dioxide3UV,0:kT/q (computed)3UC,0:Silicon-Oxide Interface Charge (phi_ms)Channel-Type-Independent Fabrication Parameters3UV,0:Band-gap Voltage (computed, Eg(T))3U,0:Intrinsic Carrier Concentration (computed, ni(T)) [1/cm^3]PHYSICAL_LOG_PHYSICAL_INITLIB_32    PNP TransistorUV:Base Present VoltageUV:Base Voltage on ResetUF:Base to Substrate CapacitanceUV:Collector Present VoltageUV:Collector Voltage on ResetUF:Collector to Substrate CapacitanceUV:Emitter Present VoltageUV:Emitter Voltage on ResetUF:Emitter to Substrate CapacitanceUF:Base to Emitter CapacitanceUF:Base to Collector CapacitanceU:Forward gainU:Reverse gainUA:IsUV:Kt/qUV:Crowbar VoltagePNP1_LOG_PNP1_INITLIB_32    PNP2 TransistorUV:Base Present VoltageUV:Base Voltage on ResetUF:Base to Substrate CapacitanceUV:Collector Present VoltageUV:Collector Voltage on ResetUF:Collector to Substrate CapacitanceUV:Emitter Present VoltageUV:Emitter Voltage on ResetUF:Emitter to Substrate CapacitanceUF:Base to Emitter CapacitanceUF:Base to Collector CapacitanceU:Forward gainU:Reverse gainUA:IsUV:Kt/qUV:Crowbar VoltageUV:VaPNP2_LOG_PNP2_INITLIB_32     Pfet Transistor (Separate L and W, good for logspc)UV:Gate Present VoltageUV:Gate Voltage On ResetUF:Gate To Substrate CapacitanceUV:Drain Present VoltageUV:Drain Voltage On ResetUF:Drain To Substrate CapacitanceUV:Source Present VoltageUV:Source Voltage On ResetUF:Source To Substrate CapacitanceUV:Well Present VoltageUV:Well Voltage On ResetUF:Well CapacitanceUF:Gate to Drain CapacitanceUF:Gate to Source CapacitanceUum:WUum:LUV:VtUS/V:BetaU:KappaUV:kT/qUV:Early Effect V0U:NumberPSPC1_LOG_PSPC1_INITLIB_32             Piece-Wise Linear I-V Model255C:Data File::UV:Blending Radius::UV:Present Voltage on Top PinUV:Reset Voltage on Top PinUF:Top Pin CapacitanceUV:Present Voltage on Bottom PinUV:Reset Voltage on Bottom PinUF:Bottom Pin CapacitancePWL_LOG_PWL_INITLIB_32   Floating ResistorType "6m" for 6 milliohms, "6Meg" for 6 MegohmsUOhm:ResistanceUV:Present Voltage on Top PinUV:Reset Voltage on Top PinUF:Top Pin CapacitanceUV:Present Voltage on Bottom PinUV:Reset Voltage on Bottom PinUF:Bottom Pin CapacitanceRESFLOAT_LOG_RESFLOAT_INITLIB_32      Resonant Tunneling DiodeR:Sharpness:UV:NDR Start Voltage:UV:NDR End Voltage:UA:Valley Current:UA:Tail Current:UV:Tail Voltage:VInterband,Intraband:Threshold Mode:Interband;UOhm:Onset Resistance:Intraband;UA:Onset Current:Intraband;UV:Onset Voltage:UV:Present Voltage on Top PinUV:Reset Voltage on Top PinUF:Top Pin CapacitanceUV:Present Voltage on Bottom PinUV:Reset Voltage on Bottom PinUF:Bottom Pin Capacitancertd_Log_rtd_initlib_32Cv vv v vv v v v v  vvvvvvvvvvvFabrication Parameters -- Adjustment FactorsC:Fabrication Run IDN-Channel3U:Na Offset (multiplicitive)3U:Mobility Offset (multiplicitive)3UC:Qss OffsetP-Channel3U:Na Offset (multiplicitive)3U:Mobility Offset (multiplicitive)3UC:Qss OffsetRUNSPEC_LOG_RUNSPEC_INITLIB_32              Stairstep Voltage SourceB:Freeze Time?UOhm:Internal Resistance:VStairstep:Type of source:Stairstep;UV:Starting Voltage:Stairstep;UV:Ending Voltage:Stairstep;I:Number of Steps:Stairstep;Us:Time per step:Stairstep;Us:Rise/Fall time:Stairstep;Us:Initial delay:UV:Present Voltage on Pin Capacitor +UV:Reset Voltage on Pin Capacitor +UF:Pin Capacitance +UV:Present Voltage on Pin Capacitor -UV:Reset Voltage on Pin Capacitor -UF:Pin Capacitance -STAIRS_LOG_STAIRS_INITLIB_32   Die Temperature1U,0:Kelvin1U,0:Celsius1U,0:Fahrenheit1VKelvin,Celsius,Fahrenheit:DisplayTHERMAL_LOG_THERMAL_INITLIB_32 Vdd              B:Freeze Time?UOhm:Internal Resistance:VDC,Pulse,Sine:Shape of Waveform:DC;UV:DC Voltage:Pulse;UV:Initial Voltage:Pulse;UV:Pulsed Voltage:Pulse;Us:Delay Time:Pulse;Us:Rise Time:Pulse;Us:Fall Time:Pulse;Us:Pulse Width:Pulse;Us:Period:Pulse;Us:Reset delay:Sine;UV:Offset Voltage:Sine;UV:Amplitude:Sine;UHz:Frequency:Sine;Deg:Phase:Sine;Us:Delay:UV:Present Voltage on Pin Capacitor +UV:Reset Voltage on Pin Capacitor +UF:Pin Capacitance +UV:Present Voltage on Pin Capacitor -UV:Reset Voltage on Pin Capacitor -UF:Pin Capacitance -VDIFF_LOG_VDIFF_INITLIB_32  Voltage SwitchUOhm:Internal Resistance:VBistable,Monostable:Switch waveform:Bistable;UV:Initial Voltage:Bistable;UV:Pulsed Voltage:Bistable;Us:Rise Time:Bistable;Us:Fall Time:Bistable;VOff,On:Reset State:Monostable;UV:Initial VoltageMonostable;UV:Pulsed VoltageMonostable;Us:Rise TimeMonostable;Us:Fall TimeMonostable;Us:Pulse WidthUV:Present Voltage on Pin CapacitorUV:Reset Voltage on Pin CapacitorUF:Pin CapacitanceVSWITCH_LOG_VSWITCH_INITLIB_32       Transconductance Amplifier With Wide Output RangeUV:Amplifier offset voltage:U:Fraction of positive current at output:U:Fraction of negative current at output:UV:Kt/qn for differential inputs:UA:Diode leakage current:UV:Vt:UV:Early voltage:UV:Kt/qn for non-input transistors:UF:Vset - other pins capacitance:UF:Vout - Vplus,Vminus capacitance:UF:Vplus - Vminus capacitance:UV:Vminus present voltage:UV:Vminus voltage on reset:UF:Vminus node capacitance:UV:Vplus present voltage:UV:Vplus voltage on reset:UF:Vplus node capacitance:UV:Vset present voltage:UV:Vset voltage on reset:UF:Vset node capacitance:UV:Vout present voltage:UV:Vout voltage on reset:UF:Vout node capacitance:TC_LOG_WRAMP_INITLIB_32